---

Recent papers

The Electrical Characteristics of High Voltage Non Punch Through (NPT) and Field Stop IGBT for Nano Convergence Power Devices Transactions on Electrical and Electronic Materials 2018, 19 (4), 241–244.

A study of oxide etch angle of edge termination field plate for fabrication of SiC SBD Key Engineering Materials 2017.

Optimal design of trench power MOSFET for mobile application Transactions on Electrical and Electronic Materials 2017, 18 (4), 195–198.

Study on electrical characteristics according process parameters of field plate for optimizing SiC shottky barrier diode Transactions on Electrical and Electronic Materials 2017, 18 (4), 199–202.

The analysis of electrical characteristics according to fabrication of unified trench gate power MOSFET Journal of Nanoscience and Nanotechnology 2016, 16 (12), 12930–12932.

The design of electrical characteristics of dual gate power IGBT for renewable energy inverter driving Journal of Nanoscience and Nanotechnology 2016, 16 (12), 12781–12783.

Analysis of electrical characteristics of power MOSFET with floating island Journal of Nanoscience and Nanotechnology 2016, 16 (12), 12971–12974.

Study on implantless Mo SiC Schottky barrier diode optimizer structure for high efficiency Journal of Nanoscience and Nanotechnology 2016, 16 (12), 12784–12787.

A study on optimization design for a high-efficiency high-voltage trench gate field-stop IGBT Journal of Nanoscience and Nanotechnology 2016, 16 (12), 12839–12843.

A study of edge termination field plate oxide etch angle for optimize SiC Schottky barrier diode breakdown voltage characteristics Journal of Nanoscience and Nanotechnology 2016, 16 (12), 12936–12938.

Performance of non punch-through trench gate field-stop IGBT for power control system and automotive application Transactions on Electrical and Electronic Materials 2016, 17 (1), 50–55.

Analysis of electrical characteristics according to fabrication of 500 V unified trench gate power MOSFET Transactions on Electrical and Electronic Materials 2016, 17 (4), 222–226.

Design of a novel SiC MOSFET structure for EV inverter efficiency improvement Proceedings of the International Symposium on Power Semiconductor Devices and ICs 2014.

A study on characteristic improvement of IGBT with P-floating layer Journal of Electrical Engineering and Technology 2014, 9 (2), 686–694.

Enhancement of on-resistance characteristics using charge balance analysis modulation in a trench filling super junction MOSFET Journal of Electrical Engineering and Technology 2014, 9 (3), 843–847.

Design and fabrication of super junction MOSFET based on trench filling and bottom implantation process Journal of Electrical Engineering and Technology 2014, 9 (3), 964–969.

A study of field-ring design using a variety of analysis method in insulated gate bipolar transistor (IGBT) Journal of Electrical Engineering and Technology 2014, 9 (6), 1995–2003.

Analysis of lattice temperature in super junction trench gate power MOSFET as changing degree of trench etching Journal of Semiconductor Technology and Science 2014, 14 (3), 263–267.

Study on 600V super junction power MOSFET optimization and electric characteristics using deep trench filling Advanced Materials Research 2013, 663, 698–702.

A study on 400V sized trench power semiconductor for smart power ICs Advanced Materials Research 2013.

Design of trench gate GaN Power MOSFET using Al 2 O 3 gate oxide Journal of Physics: Conference Series 2012, 352 (1).

Erratum: A small-sized lateral trench electrode insulated gate bipolar transistor for improving latch-up and breakdown characteristics (Japanese Journal of Applied Physics (2001) 40 (5262)) Japanese Journal of Applied Physics 2012, 51 (7 PART 1).

Erratum: A latch-up immunized lateral trench insulated gate bipolar transistor with a p+ diverter structure for smart power integrated circuit (Japanese Journal of Applied Physics (2001) 40 (5267)) Japanese Journal of Applied Physics 2012, 51 (7 PART 1).

Erratum: A new lateral trench electrode insulated gate bipolar transistor with p+ diverter for superior electrical characteristics (Japanese Journal of Applied Physics (2003) 42 (2119)) Japanese Journal of Applied Physics 2012, 51 (7 PART 1).

Erratum: The characteristics of kink effect suppressed thin film transistor by using symmetric dual-gate (Japanese Journal of Applied Physics (2006) 45 (3943)) Japanese Journal of Applied Physics 2012, 51 (7 PART 1).

A study on the design and electrical characteristics enhancement of the floating island IGBT with low on-resistance Journal of Electrical Engineering and Technology 2012, 7 (4), 601–605.

A novel trench IGBT with a deep P+ layer beneath the trench emitter IEEE Electron Device Letters 2009, 30 (1), 82–84.

Shielding region effects on a trench gate IGBT Microelectronics Journal 2008, 39 (1), 57–62.

Electrical characteristics of single-silicon TFT structure with symmetric dual-gate for kink-effect suppression Solid-State Electronics 2006, 50 (5), 795–799.

The characteristics of kink effect suppressed thin film transistor by using symmetric dual-gate Japanese Journal of Applied Physics 2006, 45 (5 A), 3943–3948.

ESD protection circuit with an improved ESD capability for input or output circuit protection Midwest Symposium on Circuits and Systems 2005, 2005, 468–471.

Compare of SOI and SOS LIGBT structure for the thermal conductivity and self-heating characteristics Microelectronics Reliability 2004, 44 (9-11 SPEC. ISS.), 1479–1483.

The characteristics of joints with Indium-silver alloy using diffusion soldering method Materials Research Society Symposium Proceedings 2004, 817, 261–266.

A new Lateral Trench Electrode IGBT with a p+ diverter Microsystem Technologies 2003, 9 (8), 520–524.

A dual trench gate emitter switched thyristor (DTG-EST) with dual trench gate electrode and different gate oxide thickness Microelectronic Engineering 2003, 70 (1), 50–57.

The Fabrication and Experimental Results of a New Lateral Trench Electrode IGBT with a p+ Diverter Journal of Computational Electronics 2003, 2 (1), 21–28.

A new lateral trench electrode insulated gate bipolar transistor with p+ diverter for superior electrical characteristics Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 2003, 42 (4 B), 2119–2122.

A small sized lateral trench electrode IGBT for improving latch-up and breakdown characteristics Solid-State Electronics 2002, 46 (2), 295–300.

Fabrication and Experimental Results of Lateral Trench Electrode IGBT International Journal of Nonlinear Sciences and Numerical Simulation 2002, 3 (3-4), 405–409.

A new trench electrode IGBT having superior electrical characteristics for power IC systems Microelectronics Journal 2001, 32 (8), 641–647.

Simulation of a new lateral trench IGBT employing effective p+ diverter for improving latch-up characteristics Microelectronics Journal 2001, 32 (9), 749–753.

A small-sized lateral trench electrode insulated gate bipolar transistor for improving latch-up and breakdown characteristics Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 2001, 40 (9 A), 5262–5266.

A latch-up immunized lateral trench insulated gate bipolar transistor with a p+ diverter structure for smart power integrated circuit Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 2001, 40 (9 A), 5267–5270.

더보기